An Improved SPICE Model for the Study of Electro-thermal Static Behavior for two New Generations of SiC MOSFET

  • WADIA JOUHA Normandie Université, UNIROUEN, INSA Rouen, CNRS, Groupe de Physique des Matériaux, UMR 6634, Avenue de l’université B.P 12, 76800, France. Laboratory of Information Technology and Communication, National School of Applied Sciences of Tangier. University Abdelmalek Essaadi Tétouan, Maroc.
  • Pascal Dherbécourt Normandie Université, UNIROUEN, INSA Rouen, CNRS, Groupe de Physique des Matériaux, UMR 6634, Avenue de l’université B.P 12, 76800, France.
  • Ahmed El Oualkadi Laboratory of Information Technology and Communication, National School of Applied Sciences of Tangier. University Abdelmalek Essaadi Tétouan, Maroc.
  • Eric Joubert Normandie Université, UNIROUEN, INSA Rouen, CNRS, Groupe de Physique des Matériaux, UMR 6634, Avenue de l’université B.P 12, 76800, France.
  • Mohamed Masmoudi Normandie Université, UNIROUEN, INSA Rouen, CNRS, Groupe de Physique des Matériaux, UMR 6634, Avenue de l’université B.P 12, 76800, France.

Abstract

This paper aims to model the static behavior of two generations of Silicon carbide Metal Oxide Semiconductor Field Effect Transistors (SiC-MOSFETs) subjected to temperature and input voltage variations. The description of the studied device, its electro-thermal characterizations and the comparison of two generations of SiC-MOSFETs are presented. The SPICE model provided by the constructor is studied. The comparison between the simulation results of the SPICE model and measurements reveals limitations in terms of temperature behavior and electrical effects. In order to overcome these limitations, a compact model is used. This model accurately describes the static behavior of two generations of SiC-MOSFETs. The threshold voltage extracted from the compact model is exploited to analyze the physical behavior and to compare the performance of two generations of SiC-MOSFETs.
Published
Feb 15, 2019
How to Cite
JOUHA, WADIA et al. An Improved SPICE Model for the Study of Electro-thermal Static Behavior for two New Generations of SiC MOSFET. International Journal of Information Science and Technology, [S.l.], v. 3, n. 1, p. 20 - 25, feb. 2019. ISSN 2550-5114. Available at: <https://innove.org/ijist/index.php/ijist/article/view/44>. Date accessed: 22 july 2024. doi: http://dx.doi.org/10.57675/IMIST.PRSM/ijist-v3i1.44.
Section
Special issue : Reliability and performance of components and systems for power electronic applications