Experimental and microscopic analysis of 600V GaN-GIT under the short-circuit aging tests

By Jianzhi FU

Abstract


this paper presents experimental short-circuit aging tests of a 600V GaN (Gallium nitrite) GIT (Gate Injection Transistor). The short circuit aging tests effect under the drain voltage equal to 35V and the three short-circuit durations (1ms, 2ms and 4ms) are investigated. The evolution of the electrical characterizations is well shown in this paper. A microscopic analysis, related the degradation mechanism, is proposed in the paper.


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