FU, Jianzhi.
Experimental and microscopic analysis of 600V GaN-GIT under the short-circuit aging tests.
<strong>International Journal of Information Science and Technology</strong>, [S.l.], v. 3, n. 1, p. 14 - 19, feb. 2019.
ISSN 2550-5114.
Available at: &lt;<a href="https://innove.org/ijist/index.php/ijist/article/view/43" target="_new">https://innove.org/ijist/index.php/ijist/article/view/43</a>&gt;. Date accessed: 02 may 2024.
doi: <a href="http://dx.doi.org/10.57675/IMIST.PRSM/ijist-v3i1.43">http://dx.doi.org/10.57675/IMIST.PRSM/ijist-v3i1.43</a>.