Experimental and microscopic analysis of 600V GaN-GIT under the short-circuit aging tests

  • Jianzhi FU

Abstract

this paper presents experimental short-circuit aging tests of a 600V GaN (Gallium nitrite) GIT (Gate Injection Transistor). The short circuit aging tests effect under the drain voltage equal to 35V and the three short-circuit durations (1ms, 2ms and 4ms) are investigated. The evolution of the electrical characterizations is well shown in this paper. A microscopic analysis, related the degradation mechanism, is proposed in the paper.
Published
Feb 15, 2019
How to Cite
FU, Jianzhi. Experimental and microscopic analysis of 600V GaN-GIT under the short-circuit aging tests. International Journal of Information Science and Technology, [S.l.], v. 3, n. 1, p. 14 - 19, feb. 2019. ISSN 2550-5114. Available at: <https://innove.org/ijist/index.php/ijist/article/view/43>. Date accessed: 22 july 2024. doi: http://dx.doi.org/10.57675/IMIST.PRSM/ijist-v3i1.43.
Section
Special issue : Reliability and performance of components and systems for power electronic applications