JOUHA, WADIA et al. An Improved SPICE Model for the Study of Electro-thermal Static Behavior for two New Generations of SiC MOSFET. International Journal of Information Science and Technology, [S.l.], v. 3, n. 1, p. 20 - 25, feb. 2019. ISSN 2550-5114. Available at: <https://innove.org/ijist/index.php/ijist/article/view/44>. Date accessed: 13 feb. 2025. doi: http://dx.doi.org/10.57675/IMIST.PRSM/ijist-v3i1.44.